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APTM20TDUM16PG
Triple dual common source
VDSS = 200V RDSon = 16m typ @ Tj = 25C ID = 104A @ Tc = 25C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
S5/S6
MOSFET Power Module
D1 D3 D5
G1
G3
G5
S1 S1/S2
S3 S3/S4
S5
S2 G2
S4 G4
S6 G6
D2
D4
D6
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability * RoHS Compliant
D1
D3
D5
G1 S1/S2 S1 S2 G2 S3/S4
G3 S3 S4 G4 S5/S6
G5 S5 S6 G6
D2
D4
D6
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-8
APTM20TDUM16PG - Rev 1
Max ratings 200 104 77 416 30 19 390 104 50 3000
Unit V A V m W A
July, 2006
APTM20TDUM16PG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Typ
Tj = 25C Tj = 125C 16 3
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Max 250 1000 19 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID =104A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 104A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 104A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 104A, R G = 5
Min
Typ 7220 2330 146 140 53 67 32 64 88 116 849 929 936 986
Max
Unit pF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 104A IS = - 104A VR = 133V diS/dt = 100A/s Tj = 25C Tj = 25C 360 6.7
Max 104 77 1.3 5
Unit A V V/ns ns C
July, 2006 2-8 APTM20TDUM16PG - Rev 1
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 104A di/dt 700A/s VR VDSS Tj 150C
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APTM20TDUM16PG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3
Typ
Max 0.32 150 125 100 5 250
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M6
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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3-8
APTM20TDUM16PG - Rev 1
July, 2006
APTM20TDUM16PG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
V GS=15V
700 600 ID, Drain Current (A) 500 400 300 200 100 0
Transfert Characteristics 300 ID, Drain Current (A) 250 200 150 100 50 0
TJ=25C T J=125C TJ=-55C V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
10V 9V 8.5V 8V 7.5V 7V 6.5V
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 52A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 120 100 80 60 40 20 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 25 50 75 100 125 150 ID, Drain Current (A)
25
50
75
100
125
150
July, 2006 4-8 APTM20TDUM16PG - Rev 1
TC, Case Temperature (C)
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APTM20TDUM16PG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000
limited by RDSon
VGS=10V ID= 52A
100
100s
10
1ms
Single pulse TJ=150C TC=25C 1
10ms 100ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 I D=104A V DS=40V 12 TJ =25C 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160
July, 2006
VDS=100V
10000
Ciss Coss
VDS=160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5-8
APTM20TDUM16PG - Rev 1
APTM20TDUM16PG
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 25 50 75 100 125 150 175 I D, Drain Current (A)
VDS=133V RG=5 T J=125C L=100H
Rise and Fall times vs Current 160 140
V DS=133V R G=5 T J=125C L=100H
t d(off) tr and tf (ns)
120 100 80 60 40 20 0 0
tf
t d(on)
tr
25
50 75 100 125 150 175 ID, Drain Current (A)
Switching Energy vs Current 2 Switching Energy (mJ) 1.5 1 0.5 Eoff 0 0 25 50 75 100 125 150 175 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz) 200 150 100 50 0 25 38 50 63 75 88 100 I D, Drain Current (A)
VDS=133V D=50% RG=5 TJ=125C TC=75C ZCS ZVS VDS=133V RG=5 T J=125C L=100H
Switching Energy vs Gate Resistance 3
VDS=133V ID=104A T J=125C L=100H
Eoff Eon
Eon and Eoff (mJ)
2.5 2 1.5 1 0.5 0
Eoff
Eon
5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage 1000 TJ =150C
100
TJ =25C 10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
July, 2006
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-8
APTM20TDUM16PG - Rev 1
APTM20TDUM16PG
www.microsemi.com
7-8
APTM20TDUM16PG - Rev 1
July, 2006
APTM20TDUM16PG
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
8-8
APTM20TDUM16PG - Rev 1
July, 2006

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